Nanoscale Heat and Charge Transfer

The current trend of transistor scaling is not sustainable if the trend of power consumption and off-state leakage continues to increase at its current pace. According to the International Technology Roadmap for Semiconductors (ITRS), there is a scaling limit set by thermal dissipation due to leakage current in devices, as exhibited by quantum tunneling in gate insulators. Study of heat and charge transfer in nanoscale structures with increased density and low power consumption will enable significant progress in emerging applications such as neuromorphic computing. Clearly, the interface and quantum mechanical processes, rather than classical mechanisms, will dominate the new technology regime. My research goal in this area is to exploit the unconventional physics of nanoscale interfaces/edges in order to introduce game changing concepts to heating management of nanoscale devices.

Current applications of interest include:

• Heat management of systems using nanomaterials

• Reliability of 3D vertical cross-point architectures

• Charge transfer characteristics of novel materials

Related Publications

• Ahn, Chiyui, Scott W. Fong, Yongsung Kim, Seunghyun Lee, Aditya Sood, Christopher M. Neumann, Mehdi Asheghi, Kenneth E. Goodson, Eric Pop, and H-S. Philip Wong. ‘‘Energy-efficient phase-change memory with graphene as a thermal barrier", Nano Letters 15, no. 10 (2015): 6809-6814.

• Lee, Kyunghoon, Seunghyun Lee, Yun Suk Eo, Cagliyan Kurdak, and Zhaohui Zhong. ‘‘Evidence of Electronic Cloaking from Chiral Electron Transport in Bilayer Graphene Nanostructures." Physical Review B 94, no. 20 (2016).

• Rebecca Park, Max Shulaker, Gage Hills, Luckshitha Suriyasena Liyanage, Seunghyun Lee, Alvin Tang, Subhasish Mitra, and H-S Philip Wong. ‘‘Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution." ACS nano 10, no. 4 (2016).

• Mihnev, Momchil T., Faris Kadi, Charles J. Divin, Torben Winzer, Seunghyun Lee, Che-Hung Liu, Zhaohui Zhong et al. ‘‘Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene", Nature Communications 7 (2016).

• Seunghyun Lee, Alvin Tang, Shaul Aloni, H. -S. Philip Wong, ‘‘Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2", Nano Letters 16, 276-281 (2016).

• Seunghyun Lee, Joon Sohn, Zizhen Jiang, Hong-Yu Chen, and H. -S. Philip Wong, ‘‘Metal Oxide Resistive Memory using Graphene Edge Electrode", Nature Communications 6, 8407 (2015).

• Liu, Chang-Hua, You-Chia Chang, Seunghyun Lee, Yaozhong Zhang, Yafei Zhang, Theodore B. Norris, and Zhaohui Zhong. ‘‘Ultrafast lateral photo-Dember effect in graphene induced by nonequilibrium hot carrier dynamics", Nano Letters 15, no. 6 (2015): 4234-4239.

• Li, Ling, Xiangyu Chen, Ching-Hua Wang, Ji Cao, Seunghyun Lee, Alvin Tang, Chiyui Ahn, Susmit Singha Roy, Michael S. Arnold, and H-S. Philip Wong. “Vertical and Lateral Copper Transport through Graphene Layers.” ACS nano 9, no. 8 (2015): 8361-8367.

• Seunghyun Lee, Kyunghoon Lee, and Zhaohui Zhong, ‘‘Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition", Nano Letters 10 (11), 4702-4707, Oct. 8, (2010)