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Patents
Seunghyun Lee, “CONDUCTIVE WIRES AND INTETCONNECT STRUCTURE AND INTEGRATED CIRCUIT DEVICE STRUCTURE” US Patent with Samsung 2025
Seunghyun Lee, “TRANSISTOR STRUCTURE INCLUDING AS-GROWN GRAPHENE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR STRUCTURE” US Patent with Samsung 2025
Seunghyun Lee, “VERTICAL 3D STACKED RESISTIVE MEMORY AND IN-MEMORY COMPUTING APPARATUS THEROF” 10-2025-0035118
Seunghyun Lee, “3D RESISTIVE MEMORY WITH TOP SELECTOR FOR IMPROVED HEAT TRANSFER” 10-2025-0015605
Seunghyun Lee, “FERROELECTRIC DIODE MEMORY BASED ON 3D VERTICAL CROSS-POINT STRUCTURE UTILIZING ULTRA-THIN FILM ELECTRODE” 10-2025-0008491
Seunghyun Lee, “RHENIUM DISULFIDE BASED HETEROJUNCTION SENSOR FOR DETECTING ARSENIC AND THE MANUFACTURING METHOD THEREOF” 10-2025-0005896
Seunghyun Lee, “ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR FOR DETECTING LEAD AND APPARATUS FOR DETECTING ION INCLUDING THE SAME”10-2025-0000123
Seunghyun Lee, “FORMING FREE RESISTIVE SWICHING MEMORY BASED ON NANOROD SYNTHESIZED BY HYDROTHERMAL METHOD AND METHOD OF FABRICATING THE SAME” 10-2881617 (2025)
Seunghyun Lee, “TERNARY CONTENT ADDRESSABLE MEMORY BASED ON RESISTIVE MEMORIES AND METHOD OF FABRICATING THE SAME” 10-2802117 (2025)
Seunghyun Lee, “SOLVENT FREE PATTERING METHOD OF QUANTUM DOTS” 10-2835814 (2025)
Seunghyun Lee, “RESISTIVE SWICHING MEMORY BASED ON NANOTEMPLATE AND METHOD OF FABRICATING THE SAME” 10-2775851 (2025)
Seunghyun Lee, “THRESHOLD SWITCHING TRANSISTOR, COMMON SOURCE DEVICE AND PHOTO DECTECTOR” 10-2024-0202249
Seunghyun Lee, “NITROGEN DIOXIDE DETECTION SENSOR AND ITS MACUFACTURING METHOD” 10-2023-0097465"
Seunghyun Lee, “MERCURY ION DETECTION SENSOR AND ITS MACUFACTURING METHOD” 10-2023-0092152
Seunghyun Lee, Batyrbek et al “SEMICONDUCTOR DEVICE BASED ON TERNARY PRECISION XNOR LOGIC AND NEUROMORPHIC COMPUTING SYSTEM INCLUDING THE SAME” 10-2021-0165347
Seunghyun Lee, Jinho Lim “CONTACT ENGINEERING OF VERTICALLY GROWN DENDRITIC NANOMATERIALS WITH TUNNELING INSULATORS” 10-2021-0074177
Seunghyun Lee, Z.Zhong et. al “UNIFORM MULTILAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION” US 10,886,126 B2
Seunghyun Lee, Dasom Jeon “TRANSISTOR HAVING 2D MATERIALS AS GATE INSULATORS FOR HIGHLY EFFICIENT HEAT TRANSFER” 10-2020-0160087
Seunghyun Lee, et. al. “DETERMINISTIC VERTICAL RRAM WITH EDGE ELECTRODES” 10-2020-0025110
Seunghyun Lee, Jinho Lim “METHOD OF MANUFACTURING A RES2 THIN LAYER AND METHOD OF MANUFACTURING A PHOTODETECTOR USING THE SAME” 10-2020-0025103
Seunghyun Lee, Shem Seo “LOW-POWER SELECTOR WITH GRAPHENE EDGE” 10-2020-0025108
Seunghyun Lee, Joon Sohn, H.-S. Philip Wong “METAL OXIDE RESISTIVE MEMORY WITH 2-DIMENSIONAL EDGE ELECTRODES” US 10,672,604 B2
Seunghyun Lee, Chiyui Ahn, Scott Fong, Yongsung Kim, Aditya Sood, Christopher Neumann, Mehdi Asheghi, Kenneth Goodson, Eric Pop, and H. -S. Philip Wong “ ENERGY-EFFICIENT PHASE CHANGE MEMORY WITH GRAPHENE AND 2D MATERIALS AS THERMAL BARRIERS” US 9,583,702 B2
Seunghyun Lee, Kyunghoon Lee, Zhaohui Zhong, “UNIFORM MULTILAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION” US 10,886,126 B2
Seunghyun Lee, et. al. “Graphene Silicon Junction Transistor” 10-210971