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Patents

  • Seunghyun Lee, “Transistor structure including as-grown graphene and semiconductor device including the transistor structure” US Patent with Samsung

  • Seunghyun Lee, “Conductive wires and interconnect structure and integrated circuit device structure” US Patent with Samsung

  • Seunghyun Lee, “Vertical three-dimensional stacked resistive memory and in-memory computing device using the same”

  • Seunghyun Lee, “3D resistive memory with top selector for improved heat transfer”

  • Seunghyun Lee, “Vertical 3D ferroelectric diode-based memory using ultra-thin horizontal electrodes”

  • Seunghyun Lee, “Rhenium disulfide-based heterojunction arsenic sensor”

  • Seunghyun Lee, “Ion-sensing field-effect transistor lead sensor and ion detection device including the same”

  • Seunghyun Lee, “Threshold switching transistors, inverters, common-source amplifiers, and photodetectors using the same”

  • Seunghyun Lee, “Nitrogen dioxide gas sensor having a transition metal chalcogenide heterojunction structure and a method for manufacturing the same”

  • Seunghyun Lee, “Mercury ion detection sensor and manufacturing method thereof”

  • Seunghyun Lee, “Nano-template-based resistive change memory and its manufacturing method”

  • Seunghyun Lee, “Forming-free resistive change memory based on nanorods synthesized by hydrothermal synthesis and its manufacturing method”

  • Seunghyun Lee, “TERNARY CONTENT ADDRESSABLE MEMORY BASED ON RESISTIVE MEMORIES AND METHOD OF FABRICATING THE SAME”

  • Seunghyun Lee, Batyrbek et al “SOLVENT FREE PATTERING METHOD OF QUANTUM DOTS” 10-2022-0180379

  • Seunghyun Lee, Batyrbek et al “SEMICONDUCTOR DEVICE BASED ON TERNARY PRECISION XNOR LOGIC AND NEUROMORPHIC COMPUTING SYSTEM INCLUDING THE SAME” 10-2021-0165347

  • Seunghyun Lee, Jinho Lim “CONTACT ENGINEERING OF VERTICALLY GROWN DENDRITIC NANOMATERIALS WITH TUNNELING INSULATORS” 10-2021-0074177

  • Seunghyun Lee, Z.Zhong et. al “UNIFORM MULTILAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION” US 10,886,126 B2

  • Seunghyun Lee, Dasom Jeon “TRANSISTOR HAVING 2D MATERIALS AS GATE INSULATORS FOR HIGHLY EFFICIENT HEAT TRANSFER” 10-2020-0160087

  • Seunghyun Lee, et. al. “DETERMINISTIC VERTICAL RRAM WITH EDGE ELECTRODES” 10-2020-0025110

  • Seunghyun Lee, Jinho Lim “METHOD OF MANUFACTURING A RES2 THIN LAYER AND METHOD OF MANUFACTURING A PHOTODETECTOR USING THE SAME” 10-2020-0025103

  • Seunghyun Lee, Shem Seo “LOW-POWER SELECTOR WITH GRAPHENE EDGE” 10-2020-0025108

  • Seunghyun Lee, Joon Sohn, H.-S. Philip Wong “METAL OXIDE RESISTIVE MEMORY WITH 2-DIMENSIONAL EDGE ELECTRODES” US 10,672,604 B2

  • Seunghyun Lee, Chiyui Ahn, Scott Fong, Yongsung Kim, Aditya Sood, Christopher Neumann, Mehdi Asheghi, Kenneth Goodson, Eric Pop, and H. -S. Philip Wong “ ENERGY-EFFICIENT PHASE CHANGE MEMORY WITH GRAPHENE AND 2D MATERIALS AS THERMAL BARRIERS” US 9,583,702 B2

  • Seunghyun Lee, Kyunghoon Lee, Zhaohui Zhong, “UNIFORM MULTILAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION” US 10,886,126 B2

  • Seunghyun Lee, et. al. “그래핀 실리콘 접합 트랜지스터” 10-210971